{"search_session":{},"preferences":{"l":"en","queryLanguage":"en"},"patentId":"US_8237236_B2","frontPageModel":{"patentViewModel":{"ref":{"entityRefId":"181-730-332-609-09X","entityRefType":"PATENT"},"entityMetadata":{"linkedIds":{"empty":true},"tags":[],"collections":[{"id":11776,"type":"PATENT","title":"Korea Advanced Institute of Science and Technology Patent Portfolio","description":"","access":"OPEN_ACCESS","displayAvatar":true,"attested":false,"itemCount":29088,"tags":[],"user":{"id":91044780,"username":"Cambialens","firstName":"","lastName":"","created":"2015-05-04T00:55:26.000Z","displayName":"Cambialens","preferences":"{\"usage\":\"public\",\"beta\":false}","accountType":"PERSONAL","isOauthOnly":false},"notes":[{"id":8411,"type":"COLLECTION","user":{"id":91044780,"username":"Cambialens","firstName":"","lastName":"","created":"2015-05-04T00:55:26.000Z","displayName":"Cambialens","preferences":"{\"usage\":\"public\",\"beta\":false}","accountType":"PERSONAL","isOauthOnly":false},"text":"
Search Applicants and Owners separately: Korea advan* inst*. Select more for logical variants. Add to collection. Select all patents in the collection and expand by simple families. Add to collection. Total patents: 10000+
Search Applicants and Owners separately:univ* AND Montpellier. Select more for logical variants. Add to collection. Select all patents in the collection and expand by simple families. Add to collection. Total patents: 1289
Search Applicants and Owners separately: Korea advan* inst*. Select more for logical variants. Add to collection. Select all patents in the collection and expand by simple families. Add to collection. Total patents: 10000+
Search Applicants and Owners separately:univ* AND Montpellier. Select more for logical variants. Add to collection. Select all patents in the collection and expand by simple families. Add to collection. Total patents: 1289
a p-type semiconductor layer;\n
an n-type semiconductor layer contacting the p-type semiconductor layer; and\n
contact layers disposed on one of the p-type and n-type semiconductor layers, a current flowing\n
from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to an other one of the contact layers when the current is applied through the contact layers,\n
flow of the current being:\n"],"number":1,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 1, further comprising:\ncontrolled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto; and\ndecreased by increasing the intensity of the magnetic field.\n
a buffer layer contacting an other one of the p-type and n-type semiconductor layers; and\n
a semiconductor substrate contacting the buffer layer."],"number":2,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 2, wherein the semiconductor substrate includes a conductor or a semi-insulating or semi-conduction semiconductor formed of materials selected from the group consisting of GaAs, InP, Si, Ge, GaP, Sapphire, ceramic, glass and quartz."],"number":3,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 3, wherein the buffer layer comprises:\n
InGaP or AlGaP if the semiconductor substrate is formed of GaAs;\n
InAlAs if the semiconductor substrate is formed of InP;\n
Ga(Al)N if the semiconductor substrate is formed of sapphire; and\n
SiOx, SiNx, Ga(Al)N if the semiconductor substrate is formed of Si."],"number":4,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 2, wherein the n-type semiconductor is disposed on the p-type semiconductor and the contact layers are disposed on the n-type semiconductor and have an electrical connection to a voltage source."],"number":5,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 5, wherein the contact layers are formed of a single layer film of In or a multilayer film of Ti/Au/In."],"number":6,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 5, further comprising a gate disposed on the n-type semiconductor."],"number":7,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 7, wherein a thickness of the p-type semiconductor is about 6 μm and a doping density of the p-type semiconductor is about 4.448×1017/cm3."],"number":8,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 8, wherein a thickness of the n-type semiconductor is about 0.2 μm and a doping density of the n-type semiconductor is about 2.7×1016/cm3."],"number":9,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 7, wherein the p-type semiconductor comprises an InSb semiconductor doped with Be and the n-type semiconductor comprises undoped InSb."],"number":10,"annotation":false,"claim":true,"title":false},{"lines":["A switching device comprising:\n
a p-type semiconductor layer;\n
an n-type semiconductor layer; and\n
contact layers disposed on one of the p-type and n-type semiconductor layers,\n
the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers,\n
whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially in parallel therewith and substantially perpendicularly to the current flow."],"number":11,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 11, wherein the current flow can be increased by increasing the intensity of the magnetic field."],"number":12,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 12, wherein the p-type semiconductor comprises an InSb semiconductor doped with Be and the n-type semiconductor comprises undoped InSb."],"number":13,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 12, wherein the n-type semiconductor is disposed on the p-type semiconductor and the contact layers are disposed on the n-type semiconductor and have an electrical connection to a voltage source."],"number":14,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of claim 14, wherein the contact layers are formed of a single layer film of In or a multilayer film of Ti/Au/In."],"number":15,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of 14, wherein a thickness of the p-type semiconductor is about 6 μm and a doping density of the p-type semiconductor is about 4.448×1017/cm3."],"number":16,"annotation":false,"claim":true,"title":false},{"lines":["The switching device of any one of claim 16, wherein a thickness of the n-type semiconductor is about 0.2 μm and a doping density of the n-type semiconductor is about 2.7×1016/cm3."],"number":17,"annotation":false,"claim":true,"title":false},{"lines":["A switching device, comprising:\n
a p-type semiconductor layer;\n
an n-type semiconductor layer contacting the p-type semiconductor layer; and\n
contact layers formed of a single layer film of In or a multilayer film of Ti/Au/In, the contact layers being disposed on one of the p-type and n-type semiconductor layers, a current flowing from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to an other one of the contact layers when the current is applied through the contact layers, a flow of the current being controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto."],"number":18,"annotation":false,"claim":true,"title":false}]}},"filters":{"npl":[],"notNpl":[],"applicant":[],"notApplicant":[],"inventor":[],"notInventor":[],"owner":[],"notOwner":[],"tags":[],"dates":[],"types":[],"notTypes":[],"j":[],"notJ":[],"fj":[],"notFj":[],"classIpcr":[],"notClassIpcr":[],"classNat":[],"notClassNat":[],"classCpc":[],"notClassCpc":[],"so":[],"notSo":[],"sat":[]},"sequenceFilters":{"s":"SEQIDNO","d":"ASCENDING","p":0,"n":10,"sp":[],"si":[],"len":[],"t":[],"loc":[]}}